▎ 摘　　要

NOVELTY - A tunneling diode (100) consists of a silicon quantum dot layer (110) comprising silicon quantum dots (111) formed on a silicon oxide thin film, a doped layer (120) having hybrid structure (130) having graphene-silicon quantum dot hybrid structure formed on the silicon quantum dot layer, and an electrode (140) formed in upper and lower portions of the hybrid structure. USE - Tunneling diode is used for diode-based optoelectronic device. Uses include but are not limited to flexible display, solar cell, smart window, radiofrequency identification tag, and energy generation applications. ADVANTAGE - The tunneling diode has excellent electrical properties and high diode performance by controlling the size of silicon quantum dot and the doping concentration of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of tunneling diode, which involves forming the silicon quantum dot layer on silicon oxide thin film containing silicon oxide provided on a substrate (150), forming the doped layer having hybrid structure having graphene-silicon quantum dot hybrid structure formed on the silicon quantum dot layer, and forming the electrode in upper and lower portions of the hybrid structure. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of tunneling diode. Tunneling diode (100) Silicon quantum dot layer (110) Silicon quantum dot (111) Doped layer (120) Hybrid structure (130) Electrode (140) Substrate (150)