▎ 摘　　要

NOVELTY - A graphene on a surface of a target object directly synthesizing method involves forming a non-metal layer on a support substrate, disposing the target object in a space above the support substrate, which is opposite to the non-metal layer, and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, where the graphene is nucleated and grown by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with the catalytic assist from the non-metal layer, and a carbon atom from the decomposition of the precursor is anchored on the surface to form the graphene film. USE - Method for directly synthesizing graphene on a surface of a target object, that is utilized in laser pulse device, optical switch device, and thin film transistor (all claimed), where the laser pulse device is light source, a coupler, an amplifier, an isolator, a polarization controller, and a single-mode fiber. ADVANTAGE - The graphene has excellent electrical and optical characteristics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a laser pulse device, which uses a graphene film synthesized as a saturable absorber, including a light source, a coupler, an amplifier, an isolator, a polarization controller, and a single-mode fiber (2) an optical switch device, which uses a graphene film synthesized as a saturable absorber, including a first channel and a second channel configured to generate different continuous wave lasers, a modulator configured to modulate the lasers, a tunable filter configured to reduce an ambient noise while matching a central wavelength with the lasers, an amplifier configured to amplify intensities of the lasers, respectively, and a polarization controller configured to control polarization of the lasers (3) a thin film transistor, which includes a graphene film comprising a dielectric layer, the dielectric layer is the target object, a non-metal layer located on one surface of the dielectric layer, a gate electrode located on an opposite surface of the dielectric layer, a first graphene film having the conductive graphene, and a second graphene film having the semi-conductive graphene, where the dielectric layer is partially not in contact with the non-metal layer, and the second graphene film is located at a non-contact portion.