▎ 摘　　要

NOVELTY - The organic silicon/graphene thermal interface material (GG) is prepared by coating one side of a graphite film (AA) or graphene film surface with a layer of agglomerant, bonding a silica gel pad (BB) with one side coated with the layer, spray coating (CC,DD) the layer on the surface, and repeating the above steps to obtain a stack structure. The stack structure is cut (EE) into a sheet having a thickness of 0.3-3 mm, and the sheet is polished for polishing and polishing treatment. The volume fraction of the graphite or graphene films is 7.4-40%. USE - Method for preparation of organic silicon/graphene thermal interface material used for filling gap of two interfaces contact reducing heat transfer impedance, for performance of electronic device. ADVANTAGE - The method avoids the graphene and organic silicon to directly contact, thus there is no problem of catalyst poisoning. The method provides organic silicon/graphene thermal interface material with excellent heat conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the preparation of organic silicon or graphene thermal interface mate. (Drawing includes non-English language text) AAGraphite film BBSilica gel pad CC,DDStep for spray coating of the layer on the surface EEStep for cutting stack structure into a sheet GGThermal interface material