• 专利标题:   Preparation method of organic silicon/graphene thermal interface material, involves coating layer of agglomerant on surface of one side of silica gel pad sample obtained, and obtaining sample on basis of sample obtain step.
  • 专利号:   WO2022205079-A1
  • 发明人:   YE Z, ZENG X, LI J, ZHANG C, ZHANG Y, XU J, SUN R
  • 专利权人:   SHENZHEN INST ADVANCED TECHNOLOGY
  • 国际专利分类:   B32B037/12, B32B038/00, B32B007/12, B32B009/00, B32B009/04, H01L023/373
  • 专利详细信息:   WO2022205079-A1 06 Oct 2022 B32B-037/12 202287 Pages: 20 Chinese
  • 申请详细信息:   WO2022205079-A1 WOCN084433 31 Mar 2021
  • 优先权号:   WOCN084433

▎ 摘  要

NOVELTY - The organic silicon/graphene thermal interface material (GG) is prepared by coating one side of a graphite film (AA) or graphene film surface with a layer of agglomerant, bonding a silica gel pad (BB) with one side coated with the layer, spray coating (CC,DD) the layer on the surface, and repeating the above steps to obtain a stack structure. The stack structure is cut (EE) into a sheet having a thickness of 0.3-3 mm, and the sheet is polished for polishing and polishing treatment. The volume fraction of the graphite or graphene films is 7.4-40%. USE - Method for preparation of organic silicon/graphene thermal interface material used for filling gap of two interfaces contact reducing heat transfer impedance, for performance of electronic device. ADVANTAGE - The method avoids the graphene and organic silicon to directly contact, thus there is no problem of catalyst poisoning. The method provides organic silicon/graphene thermal interface material with excellent heat conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the preparation of organic silicon or graphene thermal interface mate. (Drawing includes non-English language text) AAGraphite film BBSilica gel pad CC,DDStep for spray coating of the layer on the surface EEStep for cutting stack structure into a sheet GGThermal interface material