• 专利标题:   Semiconductor substrate comprises interconnect piece comprising first metal layer located on substrate of surface substrate, second metal layer on first layer, and adhesion layer located between first and second metal layers.
  • 专利号:   CN114388376-A
  • 发明人:   ZHANG H, CHEN Z
  • 专利权人:   ADVANCED SEMICONDUCTOR ENG INC
  • 国际专利分类:   H01L021/60
  • 专利详细信息:   CN114388376-A 22 Apr 2022 H01L-021/60 202254 Chinese
  • 申请详细信息:   CN114388376-A CN11458990 02 Dec 2021
  • 优先权号:   CN11458990

▎ 摘  要

NOVELTY - Semiconductor substrate comprises semiconductor substrate, and interconnect piece comprising first metal layer located on the substrate of the surface substrate, second metal layer on the first metal layers, adhesion layer, which is located between the first and second metal layers and is directly in contact with each other, and the second and third metal layers are directly connected. The substrate further comprises third metal layer. USE - Used as semiconductor substrate. ADVANTAGE - The yield of the semiconductor substrate is improved, since the adhesion layer is located between the first metal layer and the second metal layer, where the conductivity of the adhesive layer is greater than that of the metal layer of the surface contact. The adhesion between the metal layers of the interconnect piece and the surface of the redistribution layer is improved. The reliability of the bonding between the bonding pad and the first and second metal layers is improved by providing the attachment layer. The yield is improved and the reliability of semiconductor device is improved due to the reduction of the contact resistance of the second and third metal layers with the bonding pads of the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the semiconductor substrate and formation process.