• 专利标题:   Preparation of nano-silicon-based graphene solar cell involves cleaning silicon wafer seal, soaking in hydrofluoric acid solution, removing oxide layer on window surface, and etching metal nanoparticles using silicon nanowire array.
  • 专利号:   CN107134504-A, CN107134504-B
  • 发明人:   LI S, MA W, YU J, QIN B, YANG J, WEI K, LEI Y, LV G, XIE K, WU J, YANG B, DAI Y
  • 专利权人:   UNIV KUNMING SCI TECHNOLOGY, UNIV KUNMING SCI TECHNOLOGY
  • 国际专利分类:   H01L031/0352, H01L031/07, H01L031/18
  • 专利详细信息:   CN107134504-A 05 Sep 2017 H01L-031/18 201777 Pages: 11 Chinese
  • 申请详细信息:   CN107134504-A CN10211206 01 Apr 2017
  • 优先权号:   CN10211206

▎ 摘  要

NOVELTY - Preparation of nano-silicon-based graphene solar cell involves cleaning silicon wafer seal, soaking in 1-40 wt.% hydrofluoric acid solution for 1-60 minutes, removing oxide layer on window surface, etching metal nanoparticles using silicon nanowire array, chemical/field passivating, forming metal quantum dots on silicon nanowire by chemical deposition or modifying graphite nanowires by spin coating, filling nanowires with graphene or carbon nanotubes by spin coating, baking at 50-100 degrees C for 0.1-12 hours, blocking silicon nanowire, and removing rubber seal around window. USE - Method for preparing nano-silicon-based graphene solar cell. ADVANTAGE - The solar cells have high efficiency. DETAILED DESCRIPTION - Preparation of nano-silicon-based graphene solar cell comprises cleaning silicon wafer seal, soaking in 1-40 wt.% hydrofluoric acid solution for 1-60 minutes, removing oxide layer on window surface, etching metal nanoparticles using silicon nanowire array, chemical/field passivating, forming metal quantum dots on silicon nanowire by chemical deposition or modifying graphite nanowires by spin coating, filling nanowires with graphene or carbon nanotubes by spin coating, baking at 50-100 degrees C for 0.1-12 hours, blocking silicon nanowire, removing rubber seal around window, physical vapor depositing conductive layer on silicon wafer, removing silicon nanowire array occlusion, transferring lamellar graphene to nanowire array surface, polishing backside silicon substrate, removing oxide layer, applying indium-gallium alloy or conductive silver paste, and binding.