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  • 专利标题:   Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.
  • 专利号:   WO2012126155-A1, CN102683209-A, US2013032777-A1, CN202633239-U, CN102683209-B
  • 发明人:   YIN H, LUO Z, ZHU H
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, YIN H, LUO Z, ZHU H
  • 国际专利分类:   H01L021/28, H01L021/336, H01L029/12, H01L029/423, H01L029/78, B82Y040/00, B82Y099/00, H01L021/20, H01L029/06
  • 专利详细信息:   WO2012126155-A1 27 Sep 2012 H01L-021/336 201266 Pages: 16 Chinese
  • 申请详细信息:   WO2012126155-A1 WOCN001292 05 Aug 2011
  • 优先权号:   CN10066371, CN90000071, CN10066371

▎ 摘　　要

NOVELTY - The device has a graphene layer or carbon nanotube layer (202) formed on a substrate (200). A portion of the graphene layer is exposed after a gate structure is formed on the graphene layer. The gate structure includes a gate stack (204), a sidewall (206) and a cap layer. The cap layer is set on the gate stack and the sidewall surrounding the gate stack and the cap layer. Semiconductor layers (208) are epitaxially grown on the exposed graphene layer. Metal contact layers (210) are formed on the semiconductor layers. USE - Semiconductor device. ADVANTAGE - The semiconductor device comprises a self aligned source drain contact plug, which is formed by the semiconductor layers on the graphene layer, so that the metal contact layers are formed on the semiconductor layers, thus replacing direct usage of the graphene layer to form the metal contact layers. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device. Substrate (200) Graphene layer or carbon nanotube layer (202) Gate stack (204) Sidewall (206) Semiconductor layers (208) Metal contact layers (210)