▎ 摘　　要

NOVELTY - The detector has a row-level circuit (9) that is distributed in each pixel and selects to-be-processed signal according to row gating signal of time sequence generating circuit. The row-level circuit outputs the current signal to column-level analogue front-end circuit under the action of the bias generating circuit (7) to perform current voltage conversion output. A line level circuit is controlled by row selection switch (K1) and is gated to output third bias voltage to bias voltage generating circuit. The bias voltage generating circuit outputs first bias voltage and second bias voltage, according to the input constant voltage and the third bias voltage. A column-level analogue front end circuit (8) obtains two paths of current according to the first bias voltage and the second bias voltage, and performs trans-impedance amplification to difference of the generated two paths of current and outputs as output voltage. USE - Infrared focal plane detector for mobile phone application field. ADVANTAGE - The structure stability of the infrared focal plane detector is improved, the area of the absorption plate is increased, the infrared detection sensitivity of the infrared focal plane detector is improved and is good for improving the absorption rate of the infrared focal plane detector to the incident infrared electromagnetic wave. The performance of the infrared focal plane detector is optimized, and the difficulty of the optical design of the infrared focal plane detector is reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the complementary MOS measuring circuit system. (Drawing includes non-English language text) Bias generating circuit (7) Column-level analogue front end circuit (8) Row-level circuit (9) Gate drive sub-circuit (722) Row selection switch (K1)