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  • 专利标题:   Graphene structure for use in a semiconductor device, comprises a multilayer graphene that is laminated with graphene sheets, where three interlayer materials are presented between the graphene sheets of the multilayer graphene.
  • 专利号:   US2018012846-A1, JP2018002562-A
  • 发明人:   MIYAZAKI H, YOSHIDA T, KATAGIRI M, YAMAZAKI Y, SAKAI T
  • 专利权人:   TOSHIBA KK, TOSHIBA KK
  • 国际专利分类:   H01L023/532, B82Y030/00, C01B032/15, C01B032/18, C01B032/182, C01G039/02, H01L029/06
  • 专利详细信息:   US2018012846-A1 11 Jan 2018 H01L-023/532 201809 Pages: 11 English
  • 申请详细信息:   US2018012846-A1 US446244 01 Mar 2017
  • 优先权号:   JP133555

▎ 摘　　要

NOVELTY - The graphene structure comprises a multilayer graphene (1) that is laminated with graphene sheets (1A to 1F). First interlayer material (2) is presented between the graphene sheets of the multilayer graphene. First interlayer material includes a multimer of molybdenum oxide. Second interlayer material (2) is presented between the graphene sheets of the multilayer graphene. Second interlayer material includes containing a multimer of molybdenum oxychloride. Third interlayer material includes a multimer of molybdenum chloride. Fourth interlayer material includes chlorine. USE - Graphene structure for use in a semiconductor device. ADVANTAGE - The stable resistant reduction state of the wiring is ensured. The stable and low-resistance graphene structure is obtained. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene structure. Multilayer graphene (1) Graphene sheets (1A to 1F) Interlayer materials (2,3)