▎ 摘　　要

NOVELTY - The method involves performing RCA cleaning process of a silicon chip. Nickel chemistry plating process of a graphite mold is performed. Soaking process is performed by surface active agent. Nickel plate is cleaned by hydrothermal carbon polyhydric alcohols. Annealing process of the silicon tip is performed in a tubular furnace. Photo-etching process of a semiconductor is performed. Thickness of an n-type silicon part is about 50 to 500 microns. USE - Method for preparing graphene in an electronic site transmission device. ADVANTAGE - The method enables reducing graphene preparing cost and defect rate in an environment-friendly manner. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing graphene in an electronic site transmission device. '(Drawing includes non-English language text)'