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  • 专利标题:   Hard mask composition used for manufacture of hard mask material film, comprises graphene copolymer and solvent.
  • 专利号:   US2016211142-A1, KR2016088763-A, US9899231-B2
  • 发明人:   KIM J, YU N, KIM B, YI S, CHOI J, KIM J H, YU N R, KIM B D, YI S S, CHOI J S
  • 专利权人:   KIM J, YU N, KIM B, YI S, CHOI J, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/308, G03F007/09, G03F007/11, G03F007/40, H01L021/02, H01L021/033, H01L021/311
  • 专利详细信息:   US2016211142-A1 21 Jul 2016 H01L-021/308 201650 Pages: 22 English
  • 申请详细信息:   US2016211142-A1 US996481 15 Jan 2016
  • 优先权号:   KR008261

▎ 摘　　要

NOVELTY - A hard mask composition comprises a graphene copolymer and a solvent. USE - Hard mask composition for manufacture of hard mask material film (claimed) for fabricating solid state drives, complementary metal-oxide semiconductor image sensors and computer application chip sets. ADVANTAGE - The film formed from the hard mask composition has improved etching resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view explaining the fabrication of a vertical semiconductor apparatus. Substrate (200) Insulating layers (272) Sacrificial layers (292,294,296)