▎ 摘　　要

NOVELTY - The device has a p-type layer adhered on an electric conduction reflection layer. A graphene-silver nanometer composite layer is adhered with the p-type layer to form a ohmic contact area. The p-type layer is arranged in a silver nano material layer that is covered with a graphene thin film. The silver nano material layer comprises a silver nanometer point and a silver nano wire or graphene quantum point loading silver nano particle composite layer. Diameter of the silver nano wire is 5-100 nm. The graphene-silver nanometer composite layer is covered with a middle layer. USE - UV semiconductor light-emitting device. ADVANTAGE - The device improves external quantum and light efficiency and stability. The device has better heat dispersion performance, and is inexpensive. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an UV semiconductor light-emitting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an UV semiconductor light-emitting device.