▎ 摘　　要

NOVELTY - Deposition of a two-dimensional layer on a substrate (4) in a chemical vapor deposition (CVD) reactor (1) involves feeding a process gas into gas distribution chamber(s) (11,21) of a gas inlet (2) through a supply line (10,20). The inlet contains gas outlet openings which open into a process chamber (3). The process gas or decomposition products of the process gas in the process chamber are brought to a surface of the substrate. The substrate is heated to a process temperature so that the process gas reacts chemically in the process chamber to deposit the two-dimensional layer on the surface. Each of the gas distribution chamber comprises supply lines fed with different gases or gas mixtures which simultaneously come from the different gas distribution chambers and emerges out through the associated gas outlet openings. USE - Deposition of two-dimensional layer on substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for two-dimensional layer depositing device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the CVD reactor. Chemical vapor deposition reactor (1) Gas inlet (2) Process chamber (3) Substrate (4) Supply lines (10,20) Gas distribution chambers (11,21)