▎ 摘　　要

NOVELTY - The method involves evaporating solution containing graphene quantum dot and depositing a thin film of graphene quantum dot on base material (10). The size of graphene quantum dot is 1-100 nm. The graphene is oxide graphene. USE - Method for manufacturing graphene quantum-dot thin film used in carbon-based thin film transistor (claimed). ADVANTAGE - The performance of thin film transistor is determined according to the crystalline state of thin film. The dispersion property of graphene quantum dot is improved and the deposition through the solution process is possible. The performance of transistor is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the manufacturing method for graphene quantum-dot thin film. (Drawing includes non-English language text) Base material (10)