▎ 摘　　要

NOVELTY - Preparing patterned graphene material comprises removing the pollutant on a surface of the silicon carbide wafer, cleaning the surface of the silicon carbide using plasma-enhanced chemical vapor deposition to form a silicon dioxide layer as a mask, coating a photoresist layer on the mask surface of the silicon dioxide layer, carving a substrate with the same shape on the mask to expose silicon carbide to form a window shape image, and placing the patterned silicon carbide wafer in a quartz tube and then heating the quartz tube. USE - The method is useful for preparing patterned graphene material (claimed), which is useful for manufacturing microelectronic devices. ADVANTAGE - The method simply prepares the patterned graphene material with high safety, smooth surface, good continuity and low porosity. DETAILED DESCRIPTION - Preparing patterned graphene material comprises (1) removing the pollutant on a surface of the silicon carbide wafer, (2) cleaning the surface of the silicon carbide using plasma-enhanced chemical vapor deposition to form a silicon dioxide layer having thickness of 0.4-1.2 mu m as a mask, (3) coating a photoresist layer on the mask surface of the silicon dioxide layer, carving a substrate with the same shape on the mask to expose silicon carbide to form a window shape image, (4) placing the patterned silicon carbide wafer in a quartz tube and connecting a flask, a water bath and a resistance furnace, heating the quartz tube to 800-1000 degrees C, where the resistance furnace is provided with a three-mouth bottle, (5) heating the three-neck bottle containing carbon tetrachloride liquid to 60-80 degrees C and then filling argon gas to the three-neck bottle, introducing the carbon tetrachloride liquid and argon gas mixture into the quartz tube and then reacting with silicon carbide for 30-120 minutes for generating a carbon film, (6) placing the carbon film in the buffered hydrofluoric acid solution to remove silicon dioxide image, where the solution and the carbon film are present in the ratio of 1:1; (7) coating a copper film layer having thickness of 200-300 nm on the wafer using a physical vapor deposition (PVD) method, (8) reacting the plated copper film layer in the wafer with the argon gas and then annealing at 900-1100 degrees C for 15-25 minutes to relocate the carbon film to form graphene, and (9) patterning the graphene in iron(III) chloride solution to remove the copper film.