▎ 摘　　要

NOVELTY - Manufacturing semiconductor comprises (S101) implanting a dopant into a semiconductor substrate, (S102) capping a material having a two-dimensional honeycomb lattice structure on the semiconductor substrate implanted with the dopant, (S103) heat-treating the capped semiconductor substrate, and (S104) removing the material of two-dimensional honeycomb lattice structure from heat-treated semiconductor substrate. The material of two-dimensional honeycomb lattice structure is a functionalized graphene oxide nanosheet. USE - The semiconductor is useful in filed of power conversion devices, electric and electronic systems. ADVANTAGE - The semiconductor: is has improved roughness; has excellent device stability in voltage and can operate at high operating frequency, and has device resistance by reducing the surface leakage current of the device; improves the reliability of existing electric and electronic systems and converts power, efficiency and lighten the system; is not easily deteriorate; has high output; and high efficiency power conversion devices. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a manufacturing semiconductor (Drawing includes non-English language text). S101Implanting step S102Capping step S103Heat treatment step S104Material removing step