▎ 摘　　要

NOVELTY - The laser has a circulator (6) whose common end is connected with an output end of a polarization controller (9). Another end of the polarization controller is connected with an end of a wavelength division multiplexer (WDM) (2). Another end of the WDM is connected with a doped fiber (3), a laser beam splitter (4), a single-mode optical fiber (5), a circulator and a silicon carbide substrate (7). An ultra-fast optical fiber laser is connected with an annular cavity structure. The silicon carbide substrate is connected with a graphene (8) to form a laser mode locking device. USE - Silicon carbide substrate epitaxial growth based graphene passive mode-locked laser. ADVANTAGE - The laser utilizes a saturated absorption characteristic of the graphene for realizing high stability and high pulse energy lock mode laser. The laser ensures high repeatability, better heat conductivity and strong operability through silicon carbide substrate epitaxial growth of the graphene, and has low manufacturing cost and wide application range. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a silicon carbide substrate epitaxial growth based graphene passive mode-locked laser. '(Drawing includes non-English language text)' WDM (2) Doped fiber (3) Laser beam splitter (4) Single-mode optical fiber (5) Circulator (6) Silicon carbide substrate (7) Graphene (8) Polarization controller (9)