▎ 摘　　要

NOVELTY - The Unit has a P-type hexagonal boron nitride layer deposited on a nickel base. A graphene layer is deposited on the P-type hexagonal boron nitride layer. An N-type hexagonal boron nitride layer is deposited on the graphene layer, where the P-type and N-type hexagonal boron nitride layers sandwich the graphene layer to form a heterostructure and the N-type hexagonal boron nitride layer is closer to a surface struck by sunlight than the P-type hexagonal boron nitride layer. A hexagonal boron nitride insulating layer is interjected between the P-type hexagonal boron nitride layer and the graphene layer, where another hexagonal boron nitride insulating layer is interjected between the N-type hexagonal boron nitride layer and the graphene layer. USE - Graphene and hexagonal boron nitride van der waals hetero-structured solar energy processing unit (SPU) for converting solar energy to electric power. ADVANTAGE - The unit enhances absorption of UV and infrared portions of solar spectrum by a stack so as to improve performance of the unit. The unit produces a tri-layer doping structure by Ionphoretic implantation of lithium into an hexagonal boron nitride layer closest to a solar source and implantation of Fluorine into the hexagonal boron nitride layer furthest from the solar source. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a heterostructure.