▎ 摘　　要

NOVELTY - The method involves fixing a graphene film on a germanium substrate. A lattice array is fixed on the graphene film. A mask layer is formed on the lattice array. Lattice array peeling off process is performed. The graphene film is fixed with an outer side of a hole is etched. Lattice array etching process is performed. A graphene lattice is used as a nucleation site to grow a graphene nanometer belt device array. Electrode areas are exposed at both ends of the graphene nanometer belt device array to keep electrodes in an electrode area such that fabrication of the graphene nanometer belt device array is completed. USE - Method for manufacturing a graphene nanometer belt device array (Claimed). ADVANTAGE - The method enables improving application practicability and large-scale production efficiency of the graphene nanometer belt device array. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a graphene nanometer belt device array. (Drawing includes non-English language text).