• 专利标题:   Manufacturing method of graphene for two-dimensional thin-film used for manufacturing electronic component, involves fusing primary and secondary areas of catalyst metal layer, and re-crystallizing graphene layer on fused primary area.
  • 专利号:   KR2016106832-A, KR1716785-B1
  • 发明人:   KIM K B, KIM M S, CHO S Y
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   B01J019/18, C01B031/04
  • 专利详细信息:   KR2016106832-A 13 Sep 2016 201672 Pages: 20
  • 申请详细信息:   KR2016106832-A KR029231 02 Mar 2015
  • 优先权号:   KR029231

▎ 摘  要

NOVELTY - The method involves fusing a primary area of the catalyst metal layer (110). A graphene layer (120) is formed on the catalyst metal layer in solid-state to re-crystallize the graphene layer on the secondary area. The primary area and the secondary area of the catalyst metal layer adjacent to the primary area are fused. The graphene layer is re-crystallized on the fused primary area. The catalyst metal layer is fused in one-way direction. The catalyst metal layer is cooled. USE - Manufacturing method of graphene for two-dimensional thin-film used for manufacturing electronic component such as flat panel display and transistor. ADVANTAGE - The formed graphene layer is re-crystallized, so that the high quality graphene can be formed by the manufacturing process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing device of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene manufacturing device. Manufacturing device of graphene (10) Supply roll (21) Winding roll (22) Catalyst metal layer (110) Graphene layer (120)