▎ 摘　　要

NOVELTY - A graphene transistor comprises patterned substrate, channel layer, gate dielectric layer, source electrode, drain electrode and gate electrode. The patterned substrate is provided with ellipsoidal protrusion. The channel layer covers protruded upper surface of the patterned substrate. The source electrode and drain electrode located on the upper surface of the flat portion of patterned substrate and partially cover the upper surface of the channel layer. The gate electrode is located on the channel layer side of the upper surface of the flat portion of the patterned substrate and gate electrode is not in direct contact with the channel layer. The gate dielectric layer is located on the upper surface of the channel layer and partially covers the upper surfaces of the source electrode, drain electrode and gate electrode. USE - Graphene transistor for large-scale digital integrated circuit. ADVANTAGE - The graphene transistor uses ellipsoidal protrusions of patterned substrate to mechanically bend graphene film attached to its surface, thereby expanding the forbidden band width of graphene to improve switching ratio of graphene transistors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of the graphene transistor, which involves graphene, patterned substrate with ellipsoidal protrusion and ionic gel comprising ionic liquid, polymer and solvent in ratio of 5:1:7-5:1:15.