▎ 摘　　要

NOVELTY - A nonvolatile memory apparatus consists of an electrode (e1) (20), an electrode (e2) (70) separated from the electrode (e1), a resistive-change material layer (50) between the electrode (e1) and the electrode (e2) and configured to store information due to a resistance change caused by an electrical signal applied through the electrode (e1) and the electrode (e2), a diffusion prevention layer (40) between the electrode (e1) and the resistive change material layer and including a two-dimensional (2D) material, and a blocking layer arranged on the diffusion prevention layer. USE - Nonvolatile memory apparatus. Uses include but are not limited to phase-change random access memory (PRAM), flash memory, resistive-change RAM (RRAM), ferroelectric RAM (FeRAM), and magnetic RAM. ADVANTAGE - The nonvolatile memory apparatus has high reliability and improved resistance characteristics of the resistive-change material layer due to the diffusion prevention layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the nonvolatile memory apparatus. Pad electrode (10) Electrodes (20,70) Interlayer insulating layer (30) Diffusion prevention layer (40) Resistive-change material layer (50)