• 专利标题:   Grading gallium nitride nano array used for preparing high efficiency, flexible, high-performance gallium nitride-based device comprises graphene nano sheet substrate and upper substrate without catalyst graphene nano sheet damaged.
  • 专利号:   CN104947071-A, CN104947071-B
  • 发明人:   LI L, YANG H
  • 专利权人:   UNIV TIANJIN TECHNOLOGY
  • 国际专利分类:   B82Y030/00, B82Y040/00, C23C016/34, C23C016/44, H01L021/02
  • 专利详细信息:   CN104947071-A 30 Sep 2015 C23C-016/34 201602 Pages: 8 Chinese
  • 申请详细信息:   CN104947071-A CN10246558 14 May 2015
  • 优先权号:   CN10246558

▎ 摘  要

NOVELTY - A grading gallium nitride (GaN) nano array comprises graphene nano sheet substrate and upper substrate without catalyst graphene nano sheet damaged chemical vapor deposition (CVD) growth of grading GaN nano array. The graphene nano sheet rotary is coated on silicon or sapphire substrate. USE - Grading gallium nitride nano array used for preparing high efficiency, flexible, high-performance GaN-based device. ADVANTAGE - The nano array can transfer to flexible substrate and high heat guide substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of the grading GaN nano array which comprises using graphene nano sheet as substrate for preparation of graphene nano sheet coated on silicon or sapphire substrate; coating graphene nano sheet and substrate in horizontal tubular furnace; and using gas phase deposition CVD method without catalyst growth grading GaN nano array.