• 专利标题:   Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.
  • 专利号:   US2012190139-A1, KR2012086177-A, KR1240276-B1, US8865515-B2
  • 发明人:   NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B031/02, H01L051/48, H01L051/56, H01L031/042, H01L051/50, B82Y010/00, C01B031/04, H01L051/00, H01L051/40, H01L051/44, H01L051/52
  • 专利详细信息:   US2012190139-A1 26 Jul 2012 H01L-051/56 201253 Pages: 22 English
  • 申请详细信息:   US2012190139-A1 US356965 24 Jan 2012
  • 优先权号:   KR007470

▎ 摘  要

NOVELTY - Fabricating (M1) a graphene thin film, involves: (a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution. USE - For fabricating a graphene thin film and an optoelectronic device including an organic solar cell or an organic light emitting diode (OLED) (claimed). ADVANTAGE - The method is stable, environment-friendly, and economical mass-production method; avoids the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS); and produces uniform thin film available for a solution process. The graphene thin film is stable; has high density and high conductivity; has a thickness of 0.5-10000 nm; and enhances a life span of an organic solar cell device by applying the thin film to an electrode or a buffer layer of the organic solar cell. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabricating (M2) an optoelectronic device involving forming a buffer layer, and an electrode layer, where the buffer layer and the electrode layer are formed according to the method (M1).