• 专利标题:   Radio frequency magnetic control sputtering process to prepare graphene quantum point for e.g. electronic material involves mixing and ball-milling graphite powder and zinc oxide powder, adding polyvinyl alcohol, stirring, and press-forming.
  • 专利号:   CN103663437-A, CN103663437-B
  • 发明人:   LIU J, PAN D, CHAN F
  • 专利权人:   UNIV QINGDAO, QINGDAO HUAGAO ENERGY TECHNOLOGY CO LTD
  • 国际专利分类:   C01B031/04, C09K011/65
  • 专利详细信息:   CN103663437-A 26 Mar 2014 C01B-031/04 201434 Pages: 7 Chinese
  • 申请详细信息:   CN103663437-A CN10518141 10 Jan 2014
  • 优先权号:   CN10518141

▎ 摘  要

NOVELTY - A radio frequency magnetic control sputtering process to prepare graphene quantum point is performed by mixing and ball-milling 0.24 g graphite powder with 2 mol.% graphite and 79.76 g zinc oxide (ZnO) powder, adding 3 ml polyvinyl alcohol (PVA) as viscous agent, uniformly and fully stirring, press-forming at 40 MPa for 4 minutes, sintering to obtain graphite-oxide ceramic target, placing obtained ceramic target in magnetron sputtering chamber, bombarding distance of material using high purity argon gas, sputtering, observing graphene quantum point, and measuring fluorescence spectrum. USE - Radio frequency magnetic control sputtering process to prepare graphene quantum point for electronic, biological fluorescence, physical, chemical, biological, and research and application composite materials. ADVANTAGE - The process is simple and easy for mass production, has cheap chemical reagent, non-toxic oxide powder and diluted hydrochloric acid solution, controls particle size and product has average particle distribution size and excellent light emitting characteristics and is water-soluble. DETAILED DESCRIPTION - A radio frequency magnetic control sputtering process to prepare graphene quantum point is performed by mixing and ball-milling 0.24 g graphite powder with 2 mol.% graphite and 79.76 g ZnO powder, adding 3 ml PVA as viscous agent, uniformly and fully stirring, press-forming at 40 MPa for 4 minutes, sintering at 1.5 degrees C/minute rate, 1100 degrees C, and 40 MPa for 4 hours to obtain graphite-oxide ceramic target, placing obtained ceramic target in magnetron sputtering chamber, bombarding distance of material using high purity argon gas, sputtering at 0.5 mTorr working pressure, 1x 10-4 mTorr bottom pressure and 40 W sputtering power for 15 minutes growth time in which distance of material to glass ceramic substrate is 60 mm, observing graphene quantum point structure using transmission electron microscope (TEM), and measuring fluorescence spectrum using fluorescence photometer.