▎ 摘　　要

NOVELTY - The method involves depositing a metal or metal alloy catalyst layer on a dielectric or metal layer. A solid phase graphene precursor is deposited on the catalyst layer. Carbon is diffused from the graphene precursor through the layer to deposit multilayer graphene (MLG) on the dielectrics or metal layers via application of diffusion pressure at a diffusion temperature to form an Ml MLG layer. The catalyst layer is removed, and interlayer dielectrical is deposited. A via metal is deposited in a via hole to make edge contact throughout the thickness of both Ml and M2 MLG layers. USE - Method for forming MLG device layers. ADVANTAGE - The MLGs are joined with an edge-contact configuration, which is a most preferred maimer of connecting to the MLGs to minimize the interface contact resistance, and hence the overall via resistance. This translates to faster speed for signal propagation and clock distribution in chips as well as much lower resistive losses (IR-drop) during on-chip power distribution. Due to the absence of carbon diffusion through any metals or dielectrics, neither the MLG or doped-MLG nor the metal via require any diffusion-barrier layer, unlike copper wires that must be completely encapsulated by highly resistive refractory metals that increase process complexity, cost, and the effective resistivity of copper wires. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a method for forming MLG on a metal surface; and (2) an MLG device layer structure connected with a via. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a MLG device layer. Bottom (40) MLG layer (42) SICL layer (44) Dielectric layer (46) Additional dielectric layer (48)