▎ 摘　　要

NOVELTY - The utility model claims a graphene field effect transistor structure, comprising a silicon dioxide substrate, a first electrode layer, a graphene layer, a second electrode layer, a first dielectric layer, a second dielectric layer, the source electrode and the drain electrode. upper first electrode layer above the silicon dioxide substrate, a graphene layer on the first electrode layer, and the second electrode layer above the graphene layer, a first dielectric layer between the graphene layer and the first electrode layer, the second dielectric layer between the graphene layer and the second electrode layer. a first electrode layer and a second electrode layer is graphene conductive material, the electric field between the first electrode layer and the second electrode layer is generated perpendicular to the layer of graphene, the graphene in the electric field becomes an insulator, electric field boundary is formed at a conductive state. source electrode and drain electrode set on the graphene layer, a different shape of the conductive channel between the first electrode layer and the second electrode layer formed by the quantum state to realize the field effect tube of the switch state. The utility model can reduce the field effect tube of the energy consumption.