• 专利标题:   Hybrid structure used as electroconductive layer of e.g. photoelectric cell, has graphene thin film and zinc oxide nanorods grown on graphene thin film.
  • 专利号:   KR2011069560-A, KR1212711-B1
  • 发明人:   PARK W I, LEE J M
  • 专利权人:   UNIV HANYANG IUCFHYU
  • 国际专利分类:   B82B001/00
  • 专利详细信息:   KR2011069560-A 23 Jun 2011 B82B-001/00 201206 Pages: 20
  • 申请详细信息:   KR2011069560-A KR126343 17 Dec 2009
  • 优先权号:   KR126343

▎ 摘  要

NOVELTY - A hybrid structure (100) has a graphene thin film (30) and zinc oxide nanorods (50) grown on the graphene thin film. USE - Hybrid structure used as electroconductive layer of an optoelectronic device such as photoelectric cell and optical cell, and for high-density next generation storage unit, medical laser, industrial laser and holographic use. ADVANTAGE - The hybrid structure has excellent flexibility, electrical and optical characteristics, and enables combining graphene and features of zinc oxide nanorods by allowing graphene and nanorods to be integrated in low temperature by using a simple and inexpensive method. The hybrid structure is inexpensive to manufacture. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing hybrid structure. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a hybrid structure. Graphene Thin Film (30) Zinc Oxide Nanorods (50) Hybrid Structure (100)