▎ 摘　　要

NOVELTY - Removing impurities from grown graphene method, comprises binding graphene surface in the graphene/metal substrate/retained graphene grown by chemical vapor deposition (CVD) method, together with a film-containing film, and polishing the metal substrate with a polishing device and the side of the graphene to be removed, while spraying the polished edge with water, and after polishing, performing drying. USE - The method is useful for removing impurities from grown graphene (claimed). ADVANTAGE - The method: is free from impurities remaining on the surface of the product; does not need to consume hydrochloric acid, hydrogen peroxide, surfactant and other chemicals; can regularly replaces the brush wheel, without generating pollution; and provides a quick and reliable removal of an unnecessary layer of graphene and other impurities on the base copper, and to prepare for the subsequent smooth etching of the base copper while overcoming the formation of carbon impurity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing graphene film, comprising: (a) pre-processing by removing the impurities to obtain an impurity-free film/graphene/metal substrate; (b) etching by removing the metal substrate by removing the impurity-free film/graphene/metal substrate for etching the metal substrate to obtain a film containing a film/graphene; and (c) transferring the film-containing film/graphene onto a target substrate to remove the film-containing film.