• 专利标题:   Preparing dendritic three-dimensional graphene comprises mixing copper sulfate, nickel sulfate, sulfuric acid and additive to obtain a mixed solution, placing a copper-piece in the mixed solution and depositing nanocrystalline copper.
  • 专利号:   CN105417525-A, CN105417525-B
  • 发明人:   GUO X, JIANG J, ZENG Y, ZHANG X, HE M, GE C, LI C, XIANG H
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   C01B031/04, C01B032/186, C01B032/194
  • 专利详细信息:   CN105417525-A 23 Mar 2016 C01B-031/04 201640 Pages: 8 English
  • 申请详细信息:   CN105417525-A CN10903375 09 Dec 2015
  • 优先权号:   CN10903375

▎ 摘  要

NOVELTY - Preparing dendritic three-dimensional graphene comprises: (i) mixing copper sulfate, nickel sulfate, sulfuric acid and additive to obtain a mixed solution, placing a copper-piece as working electrode in the mixed solution and depositing nanocrystalline copper or cupronickel cluster product; (ii) washing the deposited product with ultrapure water, filtering the product and freeze-drying to obtain lyophilized sample; and (iii) placing the lyophilized sample in a vacuum oven, carrying out reduction treatment and graphene deposition process under mixed atmosphere, then removing metal substrate. USE - The method is useful for preparing dendritic three-dimensional graphene (claimed). ADVANTAGE - The dendritic three-dimensional graphene has good oxygen reduction performance. DETAILED DESCRIPTION - Preparing dendritic three-dimensional graphene comprises: (i) mixing copper sulfate, nickel sulfate, sulfuric acid and additive to obtain a mixed solution, placing a copper-piece as working electrode in the mixed solution and depositing nanocrystalline copper or cupronickel cluster product; (ii) washing the deposited product many times with ultrapure water, filtering the product and freeze-drying to obtain lyophilized sample; and (iii) placing the lyophilized sample in a vacuum oven, carrying out reduction treatment under hydrogen atmosphere, then carrying out graphene deposition process under mixed atmosphere of high-temperature hydrogen and methane, then removing metal substrate using ammonium persulfate solution or ferric chloride solution. An INDEPENDENT CLAIM is also included for dendritic three-dimensional graphene, comprising open structure at one end and closed structure at other end, has a diameter of 200-500 nm, grows into a diameter of 50-300 nm and length of 300-1000 nm, where the length of two tubular graphene is 50-600 nm, and the two tubular graphene grows into three tubular graphene having a diameter of 20-100 nm and a length of 20-100 nm.