▎ 摘　　要

NOVELTY - The semiconductor device comprises substrate (100), and first interconnect on the substrate. The first interconnect comprises first catalyst layer (201) capable of growing graphene, graphene layer in contact with a side surface of first catalyst layer, and non-catalyst layer in contact with bottom surface of graphene layer, and incapable of growing graphene. USE - Semiconductor device. ADVANTAGE - An increase in resistance of graphene interconnect is suppressed, even though interconnect width is reduced by miniaturization. Capacitance between adjacent graphene interconnects is reduced by cavity, thus reducing signal delay in graphene interconnect. A graphene layer does not affect the parasitic capacitance and the breakdown voltage, thus parasitic capacitance between graphene interconnects can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating a method manufacturing semiconductor device. Substrate (100) Interlayer insulating films (200,300) First catalyst layer (201) Conductive films (202) Connection holes (203)