▎ 摘　　要

NOVELTY - A silicon dioxide insulating layer is removed on surface of a N-type monocrystalline silicon wafer. The N-type monocrystalline silicon wafer is cleaned, graphene aqueous solution and dried, to obtain silicon-graphene. Wafer is coated with zinc oxide seed solution and annealed at 300 degrees C for 10 minutes, to obtain seed layer with zinc oxide layer of silicon-graphene. The annealed wafer with zinc oxide seed layer is placed in zinc oxide growth solution and reacted at 95 degrees C for 5 hours, to obtain silicon-graphene-zinc oxide nanowire arrays (photoanode). USE - Preparation of photoanode used for photoelectrochemical cell (claimed). ADVANTAGE - The method enables preparation of photoanode with excellent water oxidation capacity and photogenerated carrier transport characteristics. DETAILED DESCRIPTION - A silicon dioxide insulating layer is removed on surface of a N-type monocrystalline silicon wafer. The silicon dioxide insulating layer-removed N-type monocrystalline silicon wafer is cleaned. The finished N-type monocrystalline silicon wafer is placed to graphene aqueous solution with concentration of 1 mg/mL, maintained for 5 minutes and dried at 60 degrees C, to obtain silicon-graphene. Wafer is coated with zinc oxide seed solution and annealed at 300 degrees C for 10 minutes, to obtain seed layer with zinc oxide layer of silicon-graphene. The annealed wafer with zinc oxide seed layer is placed in zinc oxide growth solution and reacted at 95 degrees C for 5 hours, to obtain silicon-graphene-zinc oxide nanowire arrays (photoanode). An INDEPENDENT CLAIM is included for photoelectrochemical cell, which has photoanode, counter electrode and electrolyte.