• 专利标题:   Graphene electronic device e.g. FET comprises a substrate configured to act as a gate electrode, a layer of gate oxide disposed on the substrate, a layer of hydrophobic polymer, a graphene channel layer, and a source and drain electrodes.
  • 专利号:   US2012080658-A1, KR2012034419-A, US8592799-B2, KR1736971-B1
  • 发明人:   YANG H, SEO S, LEE S, CHUNG H, HEO J, YANG H J, SEO S A, LEE S H, CHUNG H J, HEO J S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B82Y040/00, B82Y099/00, H01L021/336, H01L029/772, H01L029/78, H01L029/06
  • 专利详细信息:   US2012080658-A1 05 Apr 2012 H01L-029/772 201225 Pages: 10 English
  • 申请详细信息:   US2012080658-A1 US067254 19 May 2011
  • 优先权号:   KR095971

▎ 摘  要

NOVELTY - The graphene electronic device comprises a substrate (110) configured to act as a gate electrode, a layer of gate oxide (112) disposed on the substrate, a layer of hydrophobic polymer such as hexamethyldisilazane disposed on the gate oxide of the substrate, a graphene channel layer (130) disposed on the hydrophobic polymer, a source electrode (142) placed on one end of the graphene channel layer, a drain electrode placed on another end of the graphene channel layer, and a passivation layer covering the graphene channel layer exposed by the source electrode and the drain electrode. USE - Used as a graphene electronic device such as a top/bottom gate-type transistor, FET and radio frequency transistor. ADVANTAGE - The graphene electronic device exhibits improved electrical characteristics, high resistance, increased carrier mobility and capacitance and reduced impurity, and is easy to operate at room temperature. DETAILED DESCRIPTION - The graphene electronic device comprises a substrate (110) configured to act as a gate electrode, a layer of gate oxide (112) disposed on the substrate, a layer of hydrophobic polymer such as hexamethyldisilazane disposed on the gate oxide of the substrate, a graphene channel layer (130) disposed on the hydrophobic polymer, a source electrode (142) placed on one end of the graphene channel layer, a drain electrode placed on another end of the graphene channel layer, and a passivation layer covering the graphene channel layer exposed by the source electrode and the drain electrode. The hydrophobic polymer has a thickness of 10-100 nm. The passivation layer has a thickness of 5-30 nm. The graphene channel layer comprises one of a mono-layer and/or a bi-layer graphene, and is disposed on the hydrophobic polymer. The gate oxide covers the graphene channel layer exposed by the source electrode and the drain electrode. An INDEPENDENT CLAIM is included for a method of fabricating a graphene electronic device. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic sectional view of a graphene electronic device. Substrate (110) Gate oxide (112) Hydrophobic polymer layer (120) Graphene channel layer (130) Source electrode. (142)