▎ 摘　　要

NOVELTY - Preparing hexagonal boron nitride surface torsion double-layer graphene involves providing a hexagonal boron nitride substrate, and placing the hexagonal boron nitride substrate in a chemical vapor growth chamber, introducing a first treatment gas into chemical vapor growth chamber, where first treatment gas is oxygen or oxygen-containing mixed gas, and annealing the hexagonal boron nitride substrate, and taking out the annealed hexagonal boron nitride substrate from the chemical vapor growth chamber. USE - The method is useful for preparing hexagonal boron nitride surface torsion double-graphite alkene, which is useful in corner electronic research. ADVANTAGE - The method solves the problem that the hexagonal boron nitride substrate surface graphene is difficult and difficult to directly prepare multi-corner double-layer graphene, providing basis for corner electronic research based on graphene. DETAILED DESCRIPTION - Preparing hexagonal boron nitride surface torsion double-layer graphene involves providing a hexagonal boron nitride substrate, and placing the hexagonal boron nitride substrate in a chemical vapor growth chamber, introducing a first treatment gas into chemical vapor growth chamber, where first treatment gas is oxygen or oxygen-containing mixed gas, and annealing the hexagonal boron nitride substrate, taking out the annealed hexagonal boron nitride substrate from the chemical vapor growth chamber, coating an auxiliary material on the surface of substrate, heating the substrate to a first preset temperature, and baking the substrate for a first preset time, where the auxiliary material is one or a mixture of polymethyl methacrylate (PMMA) and methyl Methacrylate (MMA), placing the hexagonal boron nitride substrate coated with the auxiliary material in chemical vapor growth chamber, introducing a second treatment gas into the chemical vapor growth chamber, and treating at a second preset temperature for a second preset time, where the second treatment gas is hydrogen or a mixed gas containing hydrogen, and introducing reaction gas and catalytic gas into the chemical vapor growth chamber at second preset temperature, and growing for a third preset time to form double-layer graphene with multiple corners on the hexagonal boron nitride substrate, where the reaction gas comprises a carbon source gas, and the catalytic gas is disilane.