▎ 摘　　要

NOVELTY - Growing of gallium nitride based on atomic layer deposition of aluminum nitride comprises (i) polishing and cleaning copper substrate, (ii) growing graphene layer on the copper substrate, (iii) growing aluminum nitride thin layer on the graphene layer by an atomic layer deposition process, and (iv) growing gallium nitride layer on the aluminum nitride thin layer by metal organic chemical vaporous deposition. USE - The method is useful for growing of gallium nitride based on atomic layer deposition of aluminum nitride (claimed). ADVANTAGE - The method can achieves material layer of atomic layer growth, good thickness controllability and high precision film growth quality, solves large lattice mismatch between the substrate and the epitaxial layer, and improves quality of epitaxial layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for gallium nitride laser comprising orderly growing a graphene layer, an aluminum nitride layer, a gallium nitride buffer layer, an N type gallium nitride layer, an N type cover layer, an N type waveguide layer, an active region multiple quantum well layer, a P type waveguide layer, a P type layer, a P type gallium nitride layer on the copper substrate to form gallium nitride laser structure.