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  • 专利标题:   Preparation of graphene by chemical vapor deposition method, involves reacting carbon dioxide on surface of metal substrate under specific condition, generating amorphous carbon, annealing, cooling and crystallizing graphene.
  • 专利号:   CN103935996-A, CN103935996-B
  • 发明人:   WEI Z, HU B, TIAN J
  • 专利权人:   UNIV CHONGQING
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103935996-A 23 Jul 2014 C01B-031/04 201468 Pages: 9 Chinese
  • 申请详细信息:   CN103935996-A CN10186284 06 May 2014
  • 优先权号:   CN10186284

▎ 摘　　要

NOVELTY - Preparation of graphene by chemical vapor deposition method, involves reacting carbon dioxide on surface of metal substrate at low temperature and predetermined pressure, generating amorphous carbon, increasing temperature, annealing, cooling and crystallizing graphene. USE - Preparation of graphene by chemical vapor deposition method (claimed).