• 专利标题:   Graphene precursor compound for manufacturing nanographene structure, is obtained by heat-melting metallocene compound and compound having dibenzothiophene structure, and performing ligand exchange.
  • 专利号:   JP2011219372-A, JP5577136-B2
  • 发明人:   INOUE C, ENDO M, TAKEUCHI K
  • 专利权人:   UNIV SHINSHU, INOUE O
  • 国际专利分类:   C01B031/02, C07F007/00, C07F017/00
  • 专利详细信息:   JP2011219372-A 04 Nov 2011 C07F-007/00 201174 Pages: 12 Japanese
  • 申请详细信息:   JP2011219372-A JP086677 05 Apr 2010
  • 优先权号:   JP086677

▎ 摘  要

NOVELTY - A graphene precursor compound is obtained by heat-melting a metallocene compound and a compound having dibenzothiophene structure, and performing ligand exchange. USE - Graphene precursor compound is used for manufacturing nanographene structure (both claimed) used in spintronics field. ADVANTAGE - The graphene precursor compound is efficiently and selectively manufactured. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of graphene precursor compound, which involves heat-melting metallocene compound and compound having dibenzothiophene structure, performing ligand exchange, and cooling; (2) nanographene structure formed by heating the graphene precursor compound at 800-1200 degrees C; and (3) manufacture of nanographene structure.