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  • 专利标题:   Superficial device for emitting electrons from a micrometric graphene arrangement over silicon carbide, includes quantic mechanical tunneling that is formed between the barriers of the electrons injected from the cathode contact.
  • 专利号:   MX2013001179-A1, MX340597-B
  • 发明人:   SOLIS B A R, PUERTO R A G, ZEHE A F K, RAMIREZ SOLIS B A, GOMEZ PUERTO R A
  • 专利权人:   UNIV PUEBLA BENEMERITA AUTONOMA, UNIV PUEBLA BENEMERITA AUTONOMA
  • 国际专利分类:   H01J001/02, H05G001/00, H01J001/30
  • 专利详细信息:   MX2013001179-A1 31 Jul 2014 H01J-001/02 201473 Pages: 1 Spanish
  • 申请详细信息:   MX2013001179-A1 MX001179 29 Jan 2013
  • 优先权号:   MX001179

▎ 摘　　要

NOVELTY - The device comprises multiple silicon carbide barriers, which are highly close and similar to each other. The barriers are formed by self-alignment with an equidistant separation. The quantic mechanical tunneling is formed between the barriers of the electrons injected from the cathode contact. USE - Superficial device for emitting electrons from a micrometric graphene arrangement over silicon carbide. ADVANTAGE - The quantic mechanical tunneling is formed between the barriers of the electrons injected from the cathode contact, and thus ensures an efficient emission of electrons even at low voltage.