▎ 摘　　要

NOVELTY - The structure has a graphene containing semiconductor device comprising a graphene layer (18) overlying and contacting with a conductive region. A dielectric material (14) covers the graphene containing semiconductor device and portions of another dielectric material, where the former dielectric material includes a conductive region (16) that is in contact with a conductive element of the graphene containing semiconductor device. An additional wiring region is provided within the former dielectric material. The graphene containing semiconductor device includes a field effect transistor. USE - Semiconductor structure for an integrated circuit of an electronic device. ADVANTAGE - The structure reduces dimension of an electronic device, and improves the performance of the electronic device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for forming a semiconductor structure (2) a semiconductor circuit comprising a gate dielectric layer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor structure. Interconnect level (12) Dielectric material (14) Conductive region (16) Graphene layer (18)