▎ 摘　　要

NOVELTY - Method for producing a tungsten-doped graphene oxide involves mixing a graphene oxide solution and a tungsten oxide solution to prepare a mixed solution, performing a hydrothermal treatment on the mixed solution to form a tungsten-doped graphene oxide and heat-treating the tungsten-doped graphene oxide at 800-1200 degrees C. USE - The method is useful for producing a tungsten-doped graphene oxide for preparing a tungsten-doped graphene oxide film used for an electron emitter. ADVANTAGE - The method provides tungsten-doped graphene oxide that is capable of stably emitting electrons having a high current density, improves physical properties of graphene oxide, overcomes current density limitation of high-frequency electronic devices, improves the overall current capacity and reduces oxygen and other contaminants by tungsten oxide nanoparticle doping. The film is stable during very high emission. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a tungsten-doped graphene oxide film having an oxygen content of less than or equal to 20 atomic% and a tungsten/carbon ratio of greater than or equal to 0.01; and (2) an electron emitter comprising the tungsten-doped graphene oxide film.