• 专利标题:   Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.
  • 专利号:   US2011143034-A1, KR2011066608-A, KR1279606-B1
  • 发明人:   AHN S, KANG S Y
  • 专利权人:   ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C23C016/26, C01B031/02, C23C016/32, H01L029/786
  • 专利详细信息:   US2011143034-A1 16 Jun 2011 C23C-016/26 201140 Pages: 9 English
  • 申请详细信息:   US2011143034-A1 US829381 01 Jul 2010
  • 优先权号:   KR123339

▎ 摘  要

NOVELTY - Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate (140); adsorbing the graphene source to form an adsorbed layer on the substrate; and activating the adsorbed layer by heating the adsorbed layer. USE - For depositing graphene film (claimed). ADVANTAGE - By using a time division rapid heating method, the present method forms a uniform single-layer graphene film having a large area i.e. greater than or equal to the size of a wafer used in a semiconductor manufacturing process (such as 5-12 inch wafers), and a thickness of e.g. 1 nm. Thus the present method is used to manufacture semiconductor devices and electronic/electric devices with good electric characteristics, and structural and chemical stability. DETAILED DESCRIPTION - Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate (140); adsorbing the graphene source to form an adsorbed layer on the substrate; and activating the adsorbed layer by heating the adsorbed layer. The step of supplying graphene source involves supplying a carbon compound, particularly supplying a gaseous-phase material. The step of forming the adsorbed layer involves cooling the substrate to less than or equal to room temperature to allow the substrate to adsorb the gaseous-phase graphene source. The step of activating the adsorbed layer involves heating the adsorbed layer to greater than or equal to room temperature so as to allow carbon components of the adsorbed layer to couple with each other; and further involves supplying a gaseous-phase activation source (preferably gaseous-phase material) to the adsorbed layer. The step of supplying the graphene source further involves supplying a dilute gas to the substrate. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a graphene film depositing apparatus. Graphene film depositing apparatus (10) Process chamber (100) Substrate support (130) Substrate (140) Substrate cooling unit (150) Vacuum pump (200) Deposition source tank (310) Activation source tank (320) Carrier gas tank (410) Dilute gas tank (450)