▎ 摘　　要

NOVELTY - Schottky barrier diode comprises a heterojunction comprising a gallium nitride layer (2), a graphene-in layer (3) and a barrier layer (4). The graphene insertion layer is used for improving the two-dimensional electron gas mobility between the gallium oxide layer and the barrier layer. USE - Schottky barrier diode for use in a semiconductor device i.e. gallium nitride-based high electron mobility transistor (HEMT). ADVANTAGE - The Schottky barrier diode breaks through the limitation of the gallium nitride material itself to the carrier mobility, greatly improves the mobility of the two-dimensional electron gas, and obtains the working device of the satisfy requirement of the terahertz wave band. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of Schottky barrier diode. DESCRIPTION OF DRAWING(S) - The drawing shows schematically shows a structure diagram of a Schottky barrier diode. 1First substrate 2Gallium nitride layer 3Graphene 4Barrier layer 5Insulating layer 6Schottky contact electrode 7Ohm contact