▎ 摘　　要

NOVELTY - Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition (MOCVD) reaction chamber comprises taking MOCVD reaction chamber component part for protection, electrochemically polishing to remove surface impurities and particulate contamination, depositing high-temperature resistance catalytic reaction layer, protecting with high-temperature tin paper or adhesive tape, and depositing graphene layer as film deposition preventing layer of catalytic reaction layer by chemical gas phase deposition at 800-1000 degrees C for 5-30 minutes using argon and hydrogen. USE - Method for preventing deposition of reactants and by-products in MOCVD reaction chamber. DETAILED DESCRIPTION - Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition (MOCVD) reaction chamber comprises taking MOCVD reaction chamber component part for protection, electrochemically polishing to remove surface impurities and particulate contamination, depositing high-temperature resistance catalytic reaction layer with thickness of 300-1000 nm by magnetic control sputtering, electron beam evaporating or electroplating, protecting with high-temperature tin paper or adhesive tape, and depositing graphene layer as film deposition preventing layer of catalytic reaction layer by chemical gas phase deposition at 800-1000 degrees C for 5-30 minutes using argon and hydrogen as deposition gas. The catalytic reaction layer is nickel/copper alloy, platinum/nickel alloy, platinum/rhenium alloy, iridium/rhenium/platinum alloy, platinum/gold alloy, copper/platinum alloy, nickel/rhenium alloy or copper/rhenium alloy.