• 专利标题:   Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition reaction chamber by electrochemically polishing component part, depositing catalytic reaction layer, protecting and depositing graphene layer.
  • 专利号:   CN105349964-A, CN105349964-B
  • 发明人:   FANG C, JIN K, LIU X, WANG L, YANG C, ZHANG L, ZHANG Y
  • 专利权人:   ZHONGSHAN DEHUA CHIP TECHNOLOGY CO LTD, ZHONGSHAN DEHUA CHIP TECHNOLOGY CO LTD
  • 国际专利分类:   C23C014/30, C23C014/35, C23C016/02, C23C016/04, C23C016/18, C23C016/26, C23C016/44, C25D003/56
  • 专利详细信息:   CN105349964-A 24 Feb 2016 C23C-016/26 201646 Pages: 6 English
  • 申请详细信息:   CN105349964-A CN10833264 25 Nov 2015
  • 优先权号:   CN10833264

▎ 摘  要

NOVELTY - Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition (MOCVD) reaction chamber comprises taking MOCVD reaction chamber component part for protection, electrochemically polishing to remove surface impurities and particulate contamination, depositing high-temperature resistance catalytic reaction layer, protecting with high-temperature tin paper or adhesive tape, and depositing graphene layer as film deposition preventing layer of catalytic reaction layer by chemical gas phase deposition at 800-1000 degrees C for 5-30 minutes using argon and hydrogen. USE - Method for preventing deposition of reactants and by-products in MOCVD reaction chamber. DETAILED DESCRIPTION - Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition (MOCVD) reaction chamber comprises taking MOCVD reaction chamber component part for protection, electrochemically polishing to remove surface impurities and particulate contamination, depositing high-temperature resistance catalytic reaction layer with thickness of 300-1000 nm by magnetic control sputtering, electron beam evaporating or electroplating, protecting with high-temperature tin paper or adhesive tape, and depositing graphene layer as film deposition preventing layer of catalytic reaction layer by chemical gas phase deposition at 800-1000 degrees C for 5-30 minutes using argon and hydrogen as deposition gas. The catalytic reaction layer is nickel/copper alloy, platinum/nickel alloy, platinum/rhenium alloy, iridium/rhenium/platinum alloy, platinum/gold alloy, copper/platinum alloy, nickel/rhenium alloy or copper/rhenium alloy.