• 专利标题:   Preparation of graphene reinforced copper base electric contact material, involves annealing copper powder, performing deposition of copper powder, under methane gas and argon gas, and cooling copper powder.
  • 专利号:   CN105483641-A
  • 发明人:   FENG J, LIN J, QI J, GUO J, LIU Y
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   B22F001/02, C23C016/26, C23C016/513, C23C016/56
  • 专利详细信息:   CN105483641-A 13 Apr 2016 C23C-016/26 201651 Pages: 7 English
  • 申请详细信息:   CN105483641-A CN11009346 28 Dec 2015
  • 优先权号:   CN11009346

▎ 摘  要

NOVELTY - Preparation of graphene reinforced copper base electric contact material, involves placing copper powder in a plasma enhanced chemical vapor deposition apparatus, adjusting the hydrogen gas flow rate, after evacuation, and adjusting the vacuum pressure, under an atmosphere of hydrogen, and annealing copper powder, passing methane gas and argon gas, and performing deposition, stopping the radio frequency power, and cooling copper powder at room temperature, to obtain in-situ growth graphene reinforced copper base electric contact material. USE - Preparation of graphene reinforced copper base electric contact material (claimed). ADVANTAGE - The production cost is reduced and the performance of copper base electric contact material is excellent. The graphene dispersion is even. DETAILED DESCRIPTION - Preparation of graphene reinforced copper base electric contact material, involves placing copper powder in a plasma enhanced chemical vapor deposition apparatus, adjusting the hydrogen gas flow rate to 30 sccm, after evacuation, and adjusting the vacuum pressure of plasma enhanced chemical vapor deposition apparatus to 200 Pa, under an atmosphere of hydrogen, raising temperature to 400-800 degrees C, and annealing copper powder for 15-25 minutes, passing methane gas at flow rate of 1-20 sccm and argon gas at 100 sccm, then adjusting the pressure of vacuum plasma enhanced chemical vapor deposition apparatus to 200-1000 Pa, radio frequency power to 50-200 W, and performing deposition at 400-800 degrees C for 1-5 minutes, stopping the radio frequency power, and cooling the copper powder at room temperature, to obtain in-situ growth graphene reinforced copper base electric contact material.