▎ 摘　　要

NOVELTY - The method involves applying a bonding material made of benzocyclobutene (BCB), poly methyl methacrylate (PMMA), silicon dioxide, and silicon nitride to the graphene on a donor substrate made of silicon carbide (SiC). The bonding material with graphene is placed on a handle substrate and a force is applied. The bonding material is released from the donor substrate by leaving the graphene on the handle substrate. USE - Method for reducing and transferring graphene film thickness used for large-scale production such as silicon carbide (SiC) wafer and metal catalyst film/foils. Can also be used in oxide or gate electric deposition, metal contact deposition. ADVANTAGE - The method can provide the cost efficiency, ease in device fabrication and an improved substrate attributes such as flexibility, optical transmission, thermal conductivity, and the improved electrical isolation from the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the process for reducing and transferring the graphene film thickness.