▎ 摘　　要

NOVELTY - Transferring graphene, comprises (a) providing a catalyst metal layer, (b) synthesizing graphene on at least one surface of catalyst metal layer, (c) forming a first structure by attaching a carrier to graphene, (d) forming a second structure by removing catalyst metal layer from first structure, (e) placing graphene of second structure and a target substrate facing each other, and forming a third structure by attaching target substrate to graphene while applying pressure, and (f) removing carrier contained in third structure by passing third structure through a heat applying portion. USE - The method is useful for producing graphene structure (claimed). ADVANTAGE - The method improves characteristics of transferred graphene by reducing deterioration of graphene property occurring during transferring graphene. DETAILED DESCRIPTION - Transferring graphene, comprises (a) providing a catalyst metal layer, (b) synthesizing graphene on at least one surface of the catalyst metal layer, (c) forming a first structure by attaching a carrier to the graphene, (d) forming a second structure by removing the catalyst metal layer from the first structure, (e) placing graphene of the second structure and a target substrate facing each other, and forming a third structure by attaching the target substrate to the graphene while applying pressure, and (f) removing the carrier contained in the third structure by passing the third structure through a heat applying portion.An INDEPENDENT CLAIM is also included for graphene transfer device comprises a graphene synthesizing unit for synthesizing graphene on at least one surface of the catalyst metal layer, a carrier forming unit for forming the first structure by attaching the carrier to the graphene, a catalyst metal layer removing unit for forming the second structure by removing the catalyst metal layer from the first structure, a pressing unit for forming the third structure by attaching the target substrate to the graphene while applying pressure on the graphene of the second structure facing the target substrate, and a heating unit for removing the carrier contained in the third structure by applying heat on the third structure.