• 专利标题:   Manufacturing graphene of pressure sensor, comprises e.g. manufacturing sensor structure, manufacturing mask plate of each layer of sensor structure and depositing insulating layer on silicon substrate surface.
  • 专利号:   CN114459637-A
  • 发明人:   WU X, RUI L, ZHANG Q, LU J, LI Y
  • 专利权人:   JIANGSU AOLIWEI SENSING HITECH CO LTD
  • 国际专利分类:   C23C014/04, C23C014/18, C23C014/35, C23C016/04, C23C016/34, C23C016/50, C23C016/56, C23C028/00, G01L001/00, G01L009/00
  • 专利详细信息:   CN114459637-A 10 May 2022 G01L-001/00 202272 Chinese
  • 申请详细信息:   CN114459637-A CN10098863 27 Jan 2022
  • 优先权号:   CN10098863

▎ 摘  要

NOVELTY - Manufacture of graphene of pressure sensor comprises (a) manufacturing mask plate of each layer of a package substrate (2), (b) etching a silicon substrate by a deep silicon etcher, (c) depositing a layer of insulating layer on the silicon substrate surface, (d) transferring and patterning a top layer boron nitride on a graphene sensitive structure, (e) preparing a bonding convex point and a sealing ring through evaporation process, (f) making the bonding bump and the sealing ring and (g) finishing bonding of a sensor chip and the packaging substrate by copper-tin solid-liquid diffusion bonding. USE - Manufacture of graphene of pressure sensor. Uses include but are not limited to pressure sensor, optical device, gas detection, radiation, material science, micro-nano processing, energy, biomedical and drug delivery. ADVANTAGE - The graphene realizes high measuring range and protection to the graphene, solves the problem that the service life is short and the device is not stable. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a manufacturing graphene of the pressure sensor. 1Sensor structure 2Package substrate 3Sealing cavity