▎ 摘　　要

NOVELTY - An inclined magnetic tunnel junction memory based on bismuth-selenide graphene heterojunction substrate comprises a top electrode, a spin-orbit torque magnetic tunneling junction (SOT-MTJ) and a substrate in sequence from top to bottom. The substrate is bismuth-selenide graphene heterojunction structure, the SOT-MTJ is a layered structure comprising reference layer, tunneling layer, heavy metal layer and free layer from top to bottom, where the reference layer and the free layer are made of cobalt-iron-boron materials, a wedge-shaped incline is formed between the reference layer and the tunneling layer, and a wedge-shaped incline is formed between the heavy metal layer and the free layer. USE - Inclined magnetic tunnel junction memory based on bismuth-selenide graphene heterojunction substrate for reading magnetic head of computer hard disk, magnetic random access memory (MRAM) and various magnetic sensors which is used in automation technology, household appliance, trademark recognition, satellite positioning, navigation system and precision measurement technology. ADVANTAGE - The memory can be slightly deviated from the z direction by controlling the magnetic easy axis, enables non-field magnetization of current induction. The Rashba effect generated by wedge-shaped inclination formed between the SOT-MTJ of the magnetic tunnel junction enables the magnetic moment to be more easily turned, to improve the spin track torque (SOT) efficiency. By reading and writing separation, ensuring that without external magnetic field can be read and write function.