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  • 专利标题:   Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.
  • 专利号:   CN105568375-A
  • 发明人:   DUAN X
  • 专利权人:   DUAN X
  • 国际专利分类:   C30B029/02, C30B029/60
  • 专利详细信息:   CN105568375-A 11 May 2016 C30B-029/02 201653 Pages: 4 English
  • 申请详细信息:   CN105568375-A CN10523873 08 Oct 2014
  • 优先权号:   CN10523873

▎ 摘　　要

NOVELTY - Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide. The obtained single crystal silicon carbide is provided with electron beam bombardment and laser irradiation to form single crystal graphene wire. The obtained formed product is carbonized. USE - Method for manufacturing single crystal graphene wire (claimed). ADVANTAGE - The method enables to manufacture single crystal graphene wire that has high conductivity and tensile strength.