• 专利标题:   Method for regulating and controlling two-dimensional ferromagnetic/anti-ferromagnetic heterojunction exchange bias used in spinning electronics, comprises e.g. focusing laser light emitted by laser on plane and adjusting laser exerts out-of-plane pressure and interlayer spacing of heterojunction.
  • 专利号:   CN114242886-A
  • 发明人:   MIAO X, XU L, LI Z, TONG L, PENG Z, LIN R, HUANG X, YE L
  • 专利权人:   HUBEI JIANGCHENG LAB, UNIV HUAZHONG SCI TECHNOLOGY
  • 国际专利分类:   H01L043/08, H01L043/10, H01L043/12
  • 专利详细信息:   CN114242886-A 25 Mar 2022 H01L-043/08 202258 Chinese
  • 申请详细信息:   CN114242886-A CN11450173 30 Nov 2021
  • 优先权号:   CN11450173

▎ 摘  要

NOVELTY - The method comprises disposing a single-layer graphene nano-powder on the front side of the two-dimensional ferromagnetic/anti-ferromagnetic heterojunction sample, focusing the laser light emitted by the laser on the plane, where the single-layer graphene nano-powder is located to control the movement of the sample, and adjusting the laser exerts out-of-plane pressure on the sample, and the interlayer spacing of the heterojunction by changing the laser power in the process of moving to achieve the regulation of exchange bias effect, where the lower layer of the heterojunction is a two-dimensional ferromagnetic material, and the upper layer is a two-dimensional anti-ferromagnetic material. USE - Method for regulating and controlling two-dimensional ferromagnetic/anti-ferromagnetic heterojunction exchange bias, which is used in spinning electronics. Can also be used in giant magneto-resistive device, magnetic sensor, hard disk drive and magnetic device. ADVANTAGE - The method: solves the problem that the blocking temperature is low and exchange bias field is small, and it cannot be effectively optimized; continuously adjusts the exchange bias effect in the Van der Dehua magnetic heterojunction, and improves the controllability of the effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for regulating and controlling two-dimensional ferromagnetic/anti-ferromagnetic heterojunction exchange bias. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a device for implementing a laser shock reinforcement process on the prepared heterojunction.