▎ 摘　　要

NOVELTY - The method involves forming germanium layer (120) on surface of substrate (110). The graphene is formed directly on the germanium layer e.g. single crystalline or polycrystalline germanium layer by supplying carbon-containing gas into chamber in which the substrate is located. The substrate is made of silicon, silicon oxide, quartz, glass, plastic, or sapphire. USE - Method of manufacturing graphene used for electronic device. ADVANTAGE - Since the graphene material layer is directly formed on the germanium substrate, there is no need of catalyst metal layer in manufacturing process, the graphene layer is not polluted by the catalyst metal. Thus, the high purity graphene layer can be manufactured. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the process of manufacturing graphene. Substrate (110) Germanium layer (120) Graphene layer (130)